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UJ3D1220KSD

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UJ3D1220KSD

DIODE SIL CARB 1.2KV 10A TO247-3

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

Qorvo UJ3D1220KSD is a Silicon Carbide (SiC) Schottky diode with a 1200 V reverse voltage rating and a 10 A average rectified forward current. This through-hole component, housed in a TO-247-3 package, offers a forward voltage drop of 1.6 V at 10 A and a reverse leakage current of 220 µA at 1200 V. Featuring a capacitance of 1020 pF at 1 V and 1 MHz, and a no recovery time specification for currents above 500 mA, this diode is engineered for demanding applications. It operates across a junction temperature range of -55°C to 175°C. This component is prevalent in power supply units, electric vehicle charging, and industrial motor drives.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1020pF @ 1V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackageTO-247-3
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 10 A
Current - Reverse Leakage @ Vr220 µA @ 1200 V

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