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UJ3D1220K2

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UJ3D1220K2

DIODE SIL CARB 1.2KV 20A TO247-2

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

Qorvo UJ3D1220K2 is a Silicon Carbide (SiC) Schottky diode with a maximum DC reverse voltage of 1200 V and an average rectified forward current of 20A. This through-hole component is housed in a TO-247-2 package. It exhibits a forward voltage drop of 1.7 V at 20 A and a reverse leakage current of 190 µA at 1200 V. The diode features a capacitance of 810 pF at 1V and 1MHz. With a junction operating temperature range of -55°C to 175°C and a specified reverse recovery time of 0 ns, this SiC diode is suitable for high-efficiency power conversion applications across industries such as electric vehicles, industrial power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F810pF @ 1V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
Current - Reverse Leakage @ Vr190 µA @ 1200 V

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