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UJ3D1210TS

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UJ3D1210TS

DIODE SIL CARB 1.2KV 10A TO220-2

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

Qorvo UJ3D1210TS is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component offers a reverse voltage rating of 1200 V and a forward current capability of 10 A. Key electrical characteristics include a forward voltage drop of 1.6 V at 10 A and a reverse leakage current of 110 µA at the maximum reverse voltage. The UJ3D1210TS features a minimal 510 pF capacitance at 1 V and 1 MHz, contributing to its high-speed switching performance with no recovery time specified above 500 mA. Operating across a wide junction temperature range of -55°C to 175°C, this diode is housed in a standard TO-220-2 package suitable for through-hole mounting. Its robust SiC technology makes it well-suited for demanding power conversion and management systems in industries such as industrial automation, electric vehicles, and renewable energy.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F510pF @ 1V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 10 A
Current - Reverse Leakage @ Vr110 µA @ 1200 V

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