UJ3D1210TS
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo UJ3D1210TS is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component offers a reverse voltage rating of 1200 V and a forward current capability of 10 A. Key electrical characteristics include a forward voltage drop of 1.6 V at 10 A and a reverse leakage current of 110 µA at the maximum reverse voltage. The UJ3D1210TS features a minimal 510 pF capacitance at 1 V and 1 MHz, contributing to its high-speed switching performance with no recovery time specified above 500 mA. Operating across a wide junction temperature range of -55°C to 175°C, this diode is housed in a standard TO-220-2 package suitable for through-hole mounting. Its robust SiC technology makes it well-suited for demanding power conversion and management systems in industries such as industrial automation, electric vehicles, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 510pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 110 µA @ 1200 V |
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