UJ3D1210KSD
DIODE SIL CARB 1.2KV 5A TO247-3Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo UJ3D1210KSD is a Silicon Carbide (SiC) Schottky diode rated for 1200 V reverse voltage and 5 A average rectified current. This through-hole component, housed in a TO-247-3 package, exhibits a low forward voltage drop of 1.6 V at 5 A and a reverse leakage current of 110 µA at 1200 V. The device features zero reverse recovery time, indicating high-speed switching capability, and a junction operating temperature range of -55°C to 175°C. Its high voltage and low loss characteristics make it suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 5 A |
| Current - Reverse Leakage @ Vr | 110 µA @ 1200 V |
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