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UJ3D1210KS

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UJ3D1210KS

DIODE SIL CARB 1.2KV 10A TO247-3

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

The Qorvo UJ3D1210KS is a 1200V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-3 package, offers a forward voltage (Vf) of 1.6V at 10A and a reverse leakage current of 110µA at 1200V. Key performance characteristics include a capacitance of 510pF at 1V and 1MHz, and importantly, it exhibits no discernible reverse recovery time for currents above 500mA. The operational junction temperature range is -55°C to 175°C. This device is suitable for high-power and high-frequency applications across industries such as power supplies, electric vehicle charging, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F510pF @ 1V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackageTO-247-3
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 10 A
Current - Reverse Leakage @ Vr110 µA @ 1200 V

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