UJ3D1205TS
DIODE SIL CARB 1.2KV 5A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo UJ3D1205TS is a Silicon Carbide (SiC) Schottky diode designed for demanding applications. This through-hole component offers a maximum DC reverse voltage (Vr) of 1200 V and an average rectified forward current (Io) of 5 A. The forward voltage drop (Vf) is specified at 1.6 V at 5 A. Featuring a TO-220-2 package, this device boasts an exceptionally fast switching speed with a reverse recovery time (trr) of 0 ns, indicating no recovery time above 500mA (Io). The junction operating temperature ranges from -55°C to 175°C, with a reverse leakage current of 55 µA at 1200 V. Capacitance at 1V and 1MHz is rated at 250pF. The UJ3D1205TS finds utility in power conversion, electric vehicle charging, and industrial power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 5 A |
| Current - Reverse Leakage @ Vr | 55 µA @ 1200 V |
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