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UJ3D1202TS

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UJ3D1202TS

DIODE SIL CARB 1.2KV 2A TO220-2

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

Qorvo UJ3D1202TS, a Silicon Carbide (SiC) Schottky diode, offers robust performance with a maximum DC reverse voltage of 1200V and an average rectified current of 2A. This through-hole component, housed in a TO-220-2 package, exhibits a forward voltage drop of 1.6V at 5A. Its advanced SiC technology provides minimal reverse recovery time, characterized as No Recovery Time > 500mA (Io), contributing to high-efficiency operation. The diode's capacitance is 109pF at 1V and 1MHz, with a low reverse leakage of 22 µA at 1200V. Operating across a junction temperature range of -55°C to 175°C, the UJ3D1202TS is suitable for demanding applications in power conversion, industrial motor control, and electric vehicle charging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F109pF @ 1V, 1MHz
Current - Average Rectified (Io)2A
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 5 A
Current - Reverse Leakage @ Vr22 µA @ 1200 V

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