UJ3D1202TS
DIODE SIL CARB 1.2KV 2A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo UJ3D1202TS, a Silicon Carbide (SiC) Schottky diode, offers robust performance with a maximum DC reverse voltage of 1200V and an average rectified current of 2A. This through-hole component, housed in a TO-220-2 package, exhibits a forward voltage drop of 1.6V at 5A. Its advanced SiC technology provides minimal reverse recovery time, characterized as No Recovery Time > 500mA (Io), contributing to high-efficiency operation. The diode's capacitance is 109pF at 1V and 1MHz, with a low reverse leakage of 22 µA at 1200V. Operating across a junction temperature range of -55°C to 175°C, the UJ3D1202TS is suitable for demanding applications in power conversion, industrial motor control, and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 109pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 5 A |
| Current - Reverse Leakage @ Vr | 22 µA @ 1200 V |
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