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UJ3D06560KSD

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UJ3D06560KSD

DIODE SIL CARB 650V 30A TO247-3

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

Qorvo UJ3D06560KSD is a 650V, 30A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-3 package, features a maximum forward voltage (Vf) of 1.7V at 30A and a reverse leakage current of 740 µA at 650V. With a junction operating temperature range of -55°C to 175°C, it offers a capacitance of 1980pF at 1V and 1MHz. The UJ3D06560KSD is designed for applications requiring high voltage and current handling with minimal switching losses, commonly found in power supply units, electric vehicle charging, and industrial motor drives. It exhibits no reverse recovery time above 500mA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1980pF @ 1V, 1MHz
Current - Average Rectified (Io)30A
Supplier Device PackageTO-247-3
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 30 A
Current - Reverse Leakage @ Vr740 µA @ 650 V

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