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UJ3D06530TS

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UJ3D06530TS

DIODE SIL CARB 650V 30A TO220-2

Manufacturer: Qorvo

Categories: Single Diodes

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The Qorvo Gen-III UJ3D06530TS is a 650V, 30A Silicon Carbide Schottky diode packaged in a TO-220-2 through-hole configuration. This component features a maximum forward voltage (Vf) of 1.7V at 30A and a reverse leakage current of 370µA at 650V. With a junction operating temperature range of -55°C to 175°C, it exhibits no reverse recovery time for Io > 500mA, signifying exceptional high-speed switching performance. The capacitance at 1V and 1MHz is 990pF. This diode is commonly employed in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and electric vehicle (EV) chargers.

Additional Information

Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F990pF @ 1V, 1MHz
Current - Average Rectified (Io)30A
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 30 A
Current - Reverse Leakage @ Vr370 µA @ 650 V

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