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UJ3D06520TS

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UJ3D06520TS

DIODE SIL CARB 650V 20A TO220-2

Manufacturer: Qorvo

Categories: Single Diodes

Quality Control: Learn More

Qorvo Gen-III UJ3D06520TS is a 650V Silicon Carbide Schottky diode with a maximum forward voltage of 1.7V at 20A. This through-hole component, packaged in a TO-220-2, offers a 20A average rectified current (Io) and a reverse leakage of 120 µA at 650V. Its capacitance is rated at 654pF at 1V and 1MHz. The UJ3D06520TS features zero reverse recovery time for currents greater than 500mA (Io) and operates across a junction temperature range of -55°C to 175°C. This device is suitable for applications in power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure.

Additional Information

Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F654pF @ 1V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
Current - Reverse Leakage @ Vr120 µA @ 650 V

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