UJ3D06520KSD
DIODE SIL CARB 650V 10A TO247-3Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo Gen-III UJ3D06520KSD is a 650V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-3 package, features a maximum forward voltage drop of 1.7V at 10A and a minimal reverse leakage current of 120 µA at its maximum reverse voltage. The UJ3D06520KSD exhibits zero reverse recovery time, enabling high-efficiency operation in demanding power applications. Its robust design supports an operating junction temperature range of -55°C to 175°C. This device is commonly utilized in high-voltage power conversion systems, including electric vehicle chargers, industrial power supplies, and renewable energy inverters.
Additional Information
Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 654pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
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