UJ3D06512TS
DIODE SIL CARB 650V 12A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo UJ3D06512TS is a 650V, 12A Silicon Carbide (SiC) Schottky diode in a TO-220-2 through-hole package. This device features a forward voltage (Vf) of 1.7V at 12A and a reverse leakage current of 80 µA at 650V. The SiC technology offers exceptional performance characteristics, including a zero reverse recovery time (trr) for currents exceeding 500mA, contributing to higher efficiency and reduced switching losses. Operating temperature ranges from -55°C to 175°C. This component is suitable for high-power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 392pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
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