UJ3D06510TS
DIODE SIL CARB 650V 10A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo's Gen-III UJ3D06510TS is a 650V, 10A Silicon Carbide (SiC) Schottky diode in a TO-220-2 package. This through-hole component features a maximum forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 60 µA at 650V. With a junction operating temperature range of -55°C to 175°C and a capacitance of 327pF at 1V, 1MHz, it exhibits no reverse recovery time exceeding 500mA. This SiC diode is suitable for high-efficiency power conversion applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 327pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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