UJ3D06508TS
DIODE SIL CARB 650V 8A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
Quality Control: Learn More
Qorvo Gen-III SiC Schottky Diode, Part Number UJ3D06508TS. This device offers a 650V reverse voltage rating and an 8A average rectified forward current. Featuring a low forward voltage drop of 1.7V at 8A and a minimal reverse leakage current of 50 µA at 650V, this diode is engineered for high-efficiency applications. The UJ3D06508TS exhibits no reverse recovery time above 500mA (Io), a critical parameter for high-frequency switching. It is housed in a TO-220-2 package for through-hole mounting and operates across a junction temperature range of -55°C to 175°C. This component finds utility in power conversion systems, electric vehicle charging, and industrial power supplies.
Additional Information
Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Request a Quote
Clients Also Buy
UJ3D06506TS
DIODE SIL CARB 650V 6A TO220-2
UJ3D06510TS
DIODE SIL CARB 650V 10A TO220-2
UJ3D06520TS
DIODE SIL CARB 650V 20A TO220-2
