UJ3D06506TS
DIODE SIL CARB 650V 6A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
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Qorvo's Gen-III UJ3D06506TS is a 650V, 6A Silicon Carbide (SiC) Schottky diode in a TO-220-2 package. This through-hole component features a maximum forward voltage of 1.7V at 6A and a reverse leakage of 40 µA at its maximum reverse voltage. The UJ3D06506TS exhibits no reverse recovery time above 500mA, contributing to high-efficiency operation. Its operating junction temperature range is -55°C to 175°C, with a typical capacitance of 196pF @ 1V, 1MHz. This device is suitable for applications in power factor correction, switch mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 196pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
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