UJ3D06504TS
DIODE SIL CARB 650V 4A TO220-2Manufacturer: Qorvo
Categories: Single Diodes
Quality Control: Learn More
Qorvo Gen-III UJ3D06504TS is a 650V, 4A Silicon Carbide (SiC) Schottky diode in a TO-220-2 package. This through-hole component offers a maximum forward voltage of 1.7V at 4A and a reverse leakage current of 25 µA at 650V. Featuring zero reverse recovery time, it is suitable for high-frequency applications. The device operates across a junction temperature range of -55°C to 175°C and has a capacitance of 118pF at 1V and 1MHz. Industries relying on this technology include electric vehicle charging, industrial motor drives, and power factor correction circuits.
Additional Information
Series: Gen-IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 118pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
Request a Quote
Clients Also Buy
UJ3D06506TS
DIODE SIL CARB 650V 6A TO220-2
UJ3D06510TS
DIODE SIL CARB 650V 10A TO220-2
UJ3D06520TS
DIODE SIL CARB 650V 20A TO220-2
