UHB50SC12E1BC3N
1200V/50A,SIC,HALF-BRIDGE,G3,E1BManufacturer: Qorvo
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Qorvo UHB50SC12E1BC3N is a 1200V, 50A Silicon Carbide (SiC) half-bridge power module. This chassis mount device features two P-channel SiC MOSFETs, providing low on-resistance of 24mOhm at 50A and 12V Vgs. The component offers a continuous drain current of 69A (Tj) and a maximum power dissipation of 208W (Tc). Key parameters include a gate charge of 85nC at 15V and input capacitance of 2930pF at 800V. This module operates within a temperature range of -55°C to 150°C (TJ). Applications for this high-voltage power component include electric vehicles, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 P-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| Power - Max | 208W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 800V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 12V |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 15V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Supplier Device Package | Module |
| Grade | - |
| Qualification | - |
Request a Quote
Clients Also Buy
UFB15C12E1BC3N
1200V/15A,SIC,FULL-BRIDGE,G3,E1B
UJ4C075060K3S
SICFET N-CH 750V 28A TO247-3
UF3C170400B7S
SICFET N-CH 1700V 7.6A D2PAK-7
