UFB15C12E1BC3N
1200V/15A,SIC,FULL-BRIDGE,G3,E1BManufacturer: Qorvo
Categories: FET, MOSFET Arrays
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Qorvo UFB15C12E1BC3N is a 1200V, 15A Silicon Carbide (SiC) full-bridge MOSFET module. This chassis mount component features four P-channel SiC MOSFETs offering a continuous drain current of 24A (Tj) and a maximum power dissipation of 96W (Tc). The device exhibits a low on-resistance of 90mOhm at 15A, 12V, and an input capacitance (Ciss) of 1445pF at 800V. The threshold voltage (Vgs(th)) is 6V at 10mA, with a gate charge (Qg) of 46nC at 15V. Operating across a temperature range of -55°C to 150°C (TJ), this module is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 P-Channel (Full Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| Power - Max | 96W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 1445pF @ 800V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 12V |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 15V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | Module |
| Grade | - |
| Qualification | - |
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