QJD1210SA2
SIC 2N-CH 1200V 100A MODULEManufacturer: Powerex Inc.
Categories: FET, MOSFET Arrays
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The Powerex Inc. QJD1210SA2 is a Silicon Carbide (SiC) 2-channel N-Channel MOSFET array module. This component offers a Vdss of 1200V (1.2kV) and a continuous drain current (Id) of 100A at 25°C. It features a low Rds On of 17mOhm at 100A and 15V, with a gate charge (Qg) of 330nC and input capacitance (Ciss) of 8200pF. The module is designed for chassis mounting and can dissipate up to 415W of power. Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET array is suitable for applications in high-power conversion and electric vehicle powertrain systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 415W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A |
| Input Capacitance (Ciss) (Max) @ Vds | 8200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 100A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.6V @ 34mA |
| Supplier Device Package | Module |
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