QJD1210SA1
SIC 2N-CH 1200V 100A MODULEManufacturer: Powerex Inc.
Categories: FET, MOSFET Arrays
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The Powerex Inc. QJD1210SA1 is a Silicon Carbide (SiC) dual N-channel MOSFET module designed for high-power applications. Featuring a 1200V (1.2kV) drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C, this chassis mountable module offers a low on-resistance of 17mOhm at 100A and 15V. Its 520W maximum power dissipation and operating temperature range of -40°C to 150°C make it suitable for demanding environments. Key electrical parameters include a gate charge (Qg) of 330nC at 15V and an input capacitance (Ciss) of 8200pF at 10V. This component is utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 520W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A |
| Input Capacitance (Ciss) (Max) @ Vds | 8200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 100A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.6V @ 34mA |
| Supplier Device Package | Module |
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