QJD1210011
SIC 2N-CH 1200V 100A MODULEManufacturer: Powerex Inc.
Categories: FET, MOSFET Arrays
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Powerex Inc. QJD1210011 is a 2 N-Channel Silicon Carbide (SiC) MOSFET array housed in a chassis mount module. This device offers a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 100A at 25°C (Tc). Key electrical characteristics include a typical gate charge (Qg) of 500nC at 20V and an input capacitance (Ciss) of 10200pF at 800V. The on-resistance (Rds On) is specified at a maximum of 25mOhm at 100A and 20V. With a maximum power dissipation of 900W and an operating temperature range of -40°C to 175°C (TJ), this component is suitable for demanding applications in power conversion, electric vehicle powertrains, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 900W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 800V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 100A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 500nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | Module |
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