QJD1210010
SIC 2N-CH 1200V 100A MODULEManufacturer: Powerex Inc.
Categories: FET, MOSFET Arrays
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The Powerex Inc. QJD1210010 is a 1200V, 100A Silicon Carbide (SiC) MOSFET array in a chassis mount module package. This dual N-channel device features a low on-resistance of 25mOhm at 100A and 20V Vgs, with a gate charge of 500nC and input capacitance of 10200pF. Rated for a maximum power dissipation of 1080W, it operates within an extended temperature range of -40°C to 175°C. This component is suitable for high-power applications in industries such as electric vehicles, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1080W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 800V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 100A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 500nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | Module |
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