1SD210F2-MBN750H65E2
IC GATE DRVR HI/LOW SIDE MODULEManufacturer: Power Integrations
Categories: Gate Drivers
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Power Integrations 1SD210F2-MBN750H65E2 is a single-channel gate driver IC module designed for high-side or low-side operation. This robust component features a 6A source and 10A sink peak output current, making it suitable for driving IGBT gates. The module supports a high-side bootstrap voltage of up to 1200V, enabling efficient switching in demanding power applications. With typical rise and fall times of 100ns, it facilitates precise control of power transistors. The 1SD210F2-MBN750H65E2 operates from a supply voltage range of 15.5V to 16.8V and is specified for an operating temperature range of -40°C to 85°C. Mounting is via chassis mount. This device finds application in various power conversion systems, including industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 85°C |
| Voltage - Supply | 15.5V ~ 16.8V |
| Input Type | - |
| High Side Voltage - Max (Bootstrap) | 1200 V |
| Supplier Device Package | Module |
| Rise / Fall Time (Typ) | 100ns, 100ns |
| Channel Type | Single |
| Driven Configuration | High-Side or Low-Side |
| Number of Drivers | 1 |
| Gate Type | IGBT |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 6A, 10A |
| Programmable | Not Verified |
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