P3M171K2K3
SICFET N-CH 1700V 6A TO-247-3Manufacturer: PN Junction Semiconductor
Categories: Single FETs, MOSFETs
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The PN Junction Semiconductor P3M series N-Channel SiCFET, part number P3M171K2K3, offers a 1700 V breakdown voltage and a continuous drain current capability of 6 A at 25°C. This through-hole component, housed in a TO-247-3L package, features a maximum power dissipation of 68 W and a typical Rds(on) of 1.4 Ohm at 2 A and 15 V Vgs. It operates within a junction temperature range of -55°C to 175°C. The gate-source voltage limits are +19 V and -8 V, with a typical threshold voltage of 2.2 V at 2 mA. This SiCFET is suitable for applications in high-voltage power conversion, electric vehicle charging, and industrial motor drives.
Additional Information
Series: P3MRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 68W |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA (Typ) |
| Supplier Device Package | TO-247-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1700 V |
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