P3M171K0G7
SICFET N-CH 1700V 7A TO-263-7Manufacturer: PN Junction Semiconductor
Categories: Single FETs, MOSFETs
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PN Junction Semiconductor P3M Series P3M171K0G7 is an N-Channel SiCFET designed for demanding applications. This surface mount device features a Drain to Source Voltage (Vdss) of 1700 V and a continuous drain current (Id) of 7A at 25°C. The Rds On is specified at a maximum of 1.4 Ohms at 2A and 15V Vgs. With a maximum power dissipation of 100W and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for high-power switching in electric vehicle charging, industrial motor drives, and renewable energy systems. The TO-263-7 (D2PAK-7) package offers efficient thermal performance for surface mount assembly. Gate-source voltage limits are +19V and -8V, with a typical threshold voltage (Vgs(th)) of 2.2V at 2mA.
Additional Information
Series: P3MRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 100W |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA (Typ) |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1700 V |
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