P3M12040K3
SICFET N-CH 1200V 63A TO-247-3Manufacturer: PN Junction Semiconductor
Categories: Single FETs, MOSFETs
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PN Junction Semiconductor P3M series N-Channel SiCFET, part number P3M12040K3. This device features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 63 A at 25°C. The Rds On is specified at a maximum of 48 mOhm at 40 A and 15 V Vgs. With a maximum power dissipation of 349 W, this component is housed in a TO-247-3L package for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). Gate-source voltage limits are +21V and -8V, with a typical threshold voltage (Vgs(th)) of 2.2V at 40mA. This SiCFET is suitable for applications in high-power conversion and electric vehicle power trains.
Additional Information
Series: P3MRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 40A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 349W |
| Vgs(th) (Max) @ Id | 2.2V @ 40mA (Typ) |
| Supplier Device Package | TO-247-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +21V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
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