P3M07013K4
SICFET N-CH 750V 140A TO-247-4Manufacturer: PN Junction Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
PN Junction Semiconductor P3M series N-Channel SiCFET, part number P3M07013K4, offers a 750V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 140A at 25°C. This through-hole component features a low on-resistance (Rds On) of 16mOhm at 75A and 15V Vgs, enabling high power efficiency with a maximum power dissipation of 428W. Optimized for demanding applications, it operates across a junction temperature range of -55°C to 175°C. The TO-247-4L package provides robust thermal performance. This device is suitable for power conversion and management in industries such as electric vehicles, industrial power supplies, and renewable energy systems. Gate voltage tolerance is ±19V and -8V, with a typical threshold voltage (Vgs(th)) of 2.2V.
Additional Information
Series: P3MRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 75A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 428W |
| Vgs(th) (Max) @ Id | 2.2V @ 75mA (Typ) |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 750 V |
Request a Quote
Clients Also Buy
P3M173K0T3
SICFET N-CH 1700V 4A TO-220-3
P3M12080K3
SICFET N-CH 1200V 47A TO-247-3
P3M12080K4
SICFET N-CH 1200V 47A TO-247-4
