P3M06300T3
SICFET N-CH 650V 9A TO-220-3Manufacturer: PN Junction Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 9A 35W Through Hole TO-220-2L
Additional Information
Series: P3MRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 35W |
| Vgs(th) (Max) @ Id | 2.2V @ 5mA |
| Supplier Device Package | TO-220-2L |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +20V, -8V |
| Drain to Source Voltage (Vdss) | 650 V |
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