P3D12020K2
DIODE SIL CARB 1.2KV 51A TO247-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D series SiC Schottky diode, part number P3D12020K2. This component offers a 1200 V reverse voltage capability with a 51A average rectified forward current. The TO-247-2 package facilitates efficient thermal management. Key performance characteristics include a low reverse leakage of 60 µA at 650 V and an operating junction temperature range of -55°C to 175°C. Notably, this device exhibits no reverse recovery time above 500mA, a critical parameter for high-frequency switching applications. The P3D12020K2 finds application in power factor correction, inverter circuits, and general-purpose high-voltage switching power supplies across industries such as industrial automation, renewable energy, and electric vehicle powertrains. Packaged in tubes.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 51A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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