P3D12020GS
DIODE SIL CARB 1.2KV 50A TO263SManufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D series SiC Schottky diode, part number P3D12020GS. This component features a 1200 V DC reverse voltage rating and a 50 A average rectified forward current. The TO-263S package offers a robust thermal performance with an operating junction temperature range of -55°C to 175°C. Engineered with Silicon Carbide technology, it exhibits zero reverse recovery time for currents exceeding 500 mA, enabling high-frequency switching applications. Reverse leakage current is specified at 60 µA at 650 V. This device is suitable for use in power conversion systems, electric vehicle charging, industrial power supplies, and renewable energy applications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263S |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-263S |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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