P3D12015T2
DIODE SIL CARB 1.2KV 34A TO220-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D Series P3D12015T2 is a Silicon Carbide (SiC) Schottky diode rated for 1200V and 34A average rectified current. This device features an exceptionally low reverse leakage of 50 µA at 650V and a junction operating temperature range of -55°C to 175°C. The P3D12015T2 exhibits no reverse recovery time above 500mA, making it suitable for high-frequency switching applications. Supplied in a TO-220-2 package, this component is ideal for power supply, motor drive, and renewable energy systems requiring high efficiency and robust performance.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 34A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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