P3D12015K2
DIODE SIL CARB 1.2KV 40A TO247-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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The PN Junction Semiconductor P3D12015K2 is a Silicon Carbide (SiC) Schottky diode designed for high-voltage, high-current applications. This component, part of the P3D series, features a 1200 V reverse voltage rating and an average rectified forward current capability of 40A. Its TO-247-2 package provides robust thermal performance, with an operating junction temperature range of -55°C to 175°C. Key characteristics include a low reverse leakage current of 50 µA at 650 V and a negligible reverse recovery time, indicating superior switching efficiency. This device is suitable for demanding power electronics applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 40A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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