P3D12010G2
DIODE SIL CARB 1.2KV 33A TO263-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D Series SiC Schottky diode, part number P3D12010G2. This component features a 1200 V reverse voltage and a 33 A forward current capability. Designed with Silicon Carbide technology, it exhibits a zero reverse recovery time (trr) for currents greater than 500mA, making it ideal for high-frequency switching applications. The diode offers a low leakage current of 50 µA at 650 V and operates across a junction temperature range of -55°C to 175°C. Packaged in a TO-263-2 surface-mount configuration and supplied on tape and reel, this device is suited for power supply, motor control, and renewable energy systems.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 33A |
| Supplier Device Package | TO-263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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