P3D12005E2
DIODE SIL CARB 1.2KV 19A TO252-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D series SiC Schottky diode, part number P3D12005E2, offers a 1200V reverse voltage rating and 19A average rectified current. This device features a TO-252-2 package, supplied on tape and reel. Optimized for high-power applications, it exhibits a low reverse leakage of 44 µA at 650V and a negligible reverse recovery time, exceeding 500mA. The operating junction temperature range is -55°C to 175°C. Its Silicon Carbide Schottky technology ensures superior performance in demanding power conversion and management systems, including industrial power supplies and electric vehicle charging infrastructure.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 19A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
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