P3D06020P3
DIODE SIL CARB 650V 40A TO3PF-3Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor's P3D06020P3 is a SiC Schottky diode from the P3D series, packaged in a TO-3PF-3. This component features a maximum DC reverse voltage (Vr) of 650 V and an average rectified current (Io) of 40 A. The device exhibits a low reverse leakage current of 44 µA at its rated voltage. Notably, it boasts a zero reverse recovery time (trr) for currents greater than 500mA (Io), indicating superior switching performance. The operating junction temperature range is -55°C to 175°C. This SiC Schottky diode is suitable for demanding applications in power conversion, electric vehicle charging, and industrial motor drives where high efficiency and robust performance are critical.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 40A |
| Supplier Device Package | TO-3PF-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
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