P3D06020F2
DIODE SIL CARB 650V 29A TO220F-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D Series SiC Schottky Diode, part number P3D06020F2. This TO-220F-2 packaged component offers a 650 V reverse voltage rating and a 29 A average rectified forward current (Io). Featuring Silicon Carbide technology, this diode exhibits a zero reverse recovery time (trr) for currents greater than 500mA (Io), contributing to high-efficiency operation. The device maintains a low reverse leakage current of 50 µA at 650 V and operates across a junction temperature range of -55°C to 175°C. This component is well-suited for applications in power supplies, electric vehicle charging, and industrial motor control where high voltage, high current, and fast switching are critical. Supplied in tube packaging.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220F-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 29A |
| Supplier Device Package | TO-220F-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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