P3D06010I2
DIODE SIL CARB 650V 26A TO220I-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D series SiC Schottky diode, part number P3D06010I2, offers 650V reverse voltage and 26A average rectified current. This TO-220I-2 packaged device features a low reverse leakage of 44 µA at 650V and a junction operating temperature range of -55°C to 175°C. Its Silicon Carbide technology enables a "No Recovery Time > 500mA (Io)" characteristic, making it suitable for demanding applications in power factor correction, power supplies, and electric vehicle charging infrastructure. Packaged for efficient handling and assembly, this component provides high performance in robust power systems.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220I-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 26A |
| Supplier Device Package | TO-220I-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
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