P3D06010G2
DIODE SIL CARB 650V 30A TO263-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D Series SiC Schottky Diode, part number P3D06010G2, offers a 650V reverse voltage rating with a 30A average rectified current (Io). This high-performance diode utilizes Silicon Carbide (SiC) technology, enabling a "No Recovery Time > 500mA (Io)" characteristic, which significantly reduces switching losses. The device exhibits a low reverse leakage of 44 µA at its maximum reverse voltage. Packaged in a TO-263-2 surface-mount configuration, supplied on tape and reel (TR), it is engineered for efficient operation across a broad junction temperature range of -55°C to 175°C. Applications for this component include power factor correction, output rectification in switch-mode power supplies, and motor drive inverters, particularly in industries such as electric vehicles, industrial power, and renewable energy.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
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