P3D06010F2
DIODE SIL CARB 650V 21A TO220F-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D series P3D06010F2 is a 650V, 21A Silicon Carbide (SiC) Schottky diode. This component features a TO-220F-2 package and is designed for applications requiring high efficiency and performance. Its SiC technology enables a very fast switching speed with a reverse recovery time (trr) of 0 ns, supporting currents greater than 500mA (Io) without significant recovery losses. The device offers a maximum DC reverse voltage of 650V and an average rectified current handling capability of 21A. The operating junction temperature range is -55°C to 175°C, with a reverse leakage current of 44 µA at 650V. This diode is suitable for power supply, motor drive, and renewable energy systems where high voltage and current handling with minimal switching losses are critical.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220F-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 21A |
| Supplier Device Package | TO-220F-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
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