P3D06008E2
DIODE SIL CARB 650V 22A TO252-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D Series SiC Schottky Diode, part number P3D06008E2. This component offers a 650V reverse voltage rating and a continuous forward current of 22A. Featuring a TO-252-2 package, it is supplied on Tape & Reel (TR). The SiC technology provides a fast switching characteristic with no recovery time observed above 500mA. Key specifications include a low reverse leakage of 36 µA at 650V and an operating junction temperature range of -55°C to 175°C. This device is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 22A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 36 µA @ 650 V |
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