P3D06006E2
DIODE SIL CARB 650V 18A TO252-2Manufacturer: PN Junction Semiconductor
Categories: Single Diodes
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PN Junction Semiconductor P3D series SiC Schottky diode, part number P3D06006E2. This TO-252-2 packaged component offers a 650 V reverse voltage rating and an average rectified current capability of 18 A. Engineered with Silicon Carbide technology, it exhibits a minimal reverse leakage of 30 µA at 650 V and a reverse recovery time that exceeds 500 mA at 0 ns, indicating exceptionally fast switching performance. The operating junction temperature range is from -55°C to 175°C. This device is commonly implemented in power factor correction, switch mode power supplies, and electric vehicle charging infrastructure. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: P3DRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-2 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Current - Average Rectified (Io) | 18A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
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