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PJMB210N65EC_R2_00601

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PJMB210N65EC_R2_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Manufacturer: Panjit International Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 19A (Tc) 150W (Tc) Surface Mount TO-263

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Rds On (Max) @ Id, Vgs210mOhm @ 9.5A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1412 pF @ 400 V

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