PJF4NA65H_T0_00001
650V N-CHANNEL MOSFETManufacturer: Panjit International Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 3A (Ta) 23W (Tc) Through Hole ITO-220AB
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.75Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 423 pF @ 25 V |
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