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PJF4NA65A_T0_00001

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PJF4NA65A_T0_00001

650V N-CHANNEL MOSFET

Manufacturer: Panjit International Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 4A (Ta) 33W (Tc) Through Hole ITO-220AB

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs2.7Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)33W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageITO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds555 pF @ 25 V

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