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PJD80N04S-AU_L2_002A1

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PJD80N04S-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Manufacturer: Panjit International Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 40 V 28A (Ta), 190A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs2.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id2.3V @ 50µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4973 pF @ 25 V
QualificationAEC-Q101

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