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PJD10N10_L2_00001

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PJD10N10_L2_00001

100V N-CHANNEL MOSFET

Manufacturer: Panjit International Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 2.6A (Ta), 34.7A (Tc) 2W (Ta), 34.7W (Tc) Surface Mount TO-252AA

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta), 34.7A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds707 pF @ 30 V

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Panjit International Inc. - PJD10N10_L2_00001 - Microchip USA