XP0NG8A00L
TRANS PREBIAS PNP 50V SMINI6Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components XP0NG8A00L is a PNP pre-biased bipolar transistor featuring an integrated base resistor for simplified circuit design. This device is rated for a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA, with a maximum power dissipation of 150mW. It offers a transition frequency of 80MHz. The transistor includes an internal base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 4.7 kOhms, facilitating direct connection to a voltage source for switching applications. The saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current. Packaged in a compact SMINI6-G1 (6-TSSOP, SC-88, SOT-363) surface-mount configuration and supplied on tape and reel, this component is suitable for use in portable electronics and consumer devices where space is at a premium.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased + Diode |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | SMINI6-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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