UNRF2AN00A
TRANS PREBIAS NPN 50V ML3-N2Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNRF2AN00A is an NPN pre-biased bipolar transistor. This surface mount device, packaged in an ML3-N2 (SC-101, SOT-883) format, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 80mA. Featuring an integrated base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 47 kOhms, it simplifies circuit design by eliminating external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, with a transition frequency of 150 MHz. Its maximum power dissipation is 100mW, and saturation voltage is 250mV at 300µA base current and 10mA collector current. The UNRF2AN00A is supplied on tape and reel (TR) and finds application in automotive, industrial, and consumer electronics for switching and amplification functions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | ML3-N2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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