UNRF1A400A
TRANS PREBIAS PNP 50V ML3-N2Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNRF1A400A is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. With a transition frequency of 80MHz, it is suitable for signal amplification in various electronic circuits. The internal base resistor (R1) is 10 kOhms and the emitter base resistor (R2) is 47 kOhms, facilitating simplified circuit design by eliminating external biasing components. The UNRF1A400A is supplied in the ML3-N2 package, identified as SC-101 or SOT-883, and is available on tape and reel. Its power dissipation is rated at 100mW. This device finds application in consumer electronics and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | ML3-N2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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