UNR92AVG0L
TRANS PREBIAS NPN 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR92AVG0L is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA. It features an internal base resistance (R1) of 2.2 kOhms and an emitter base resistance (R2) of 2.2 kOhms, facilitating simplified circuit design. The transition frequency is rated at 150 MHz, with a minimum DC current gain (hFE) of 6 at 5 mA collector current and 10 V collector-emitter voltage. The device offers a maximum power dissipation of 125 mW and a Vce saturation of 250mV at 1.5 mA base current and 10 mA collector current. Packaged in a SSMini3-F3 (SC-89, SOT-490) for tape and reel distribution, the UNR92AVG0L is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1.5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |